Density-gradient simulations of quantum effects in ultra-thin-oxide MOS structures

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 1997, Pages 97-100

  Ancona, M G ^a   Yu, Z ^a   Lee, W C ^a   Dutton, R W ^a   Voorde, P V ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; COMPUTER SIMULATION; MATHEMATICAL MODELS; OXIDES; QUANTUM THEORY; SEMICONDUCTOR DEVICE STRUCTURES;

CAPACITANCE VOLTAGE CHARACTERISTICS; DENSITY GRADIENT SIMULATION; QUANTUM EFFECTS; QUANTUM TRANSPORT THEORY;

MOS DEVICES;

EID: 0030708081     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/sispad.1997.621345     Document Type: Conference Paper

References (13)