Influence of thermal noise on drain current in very small Si-MOSFETs

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 4 B, 2000, Pages 1974-1978

  Sano, Nobuyuki ^a   Matsuzawa, Kazuya ^b   Mukai, Mikio ^b   Nakayama, Noriaki ^b  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b SEMICONDUCTOR TECHNOLOGY ACADEMIC RESEARCH CENTER   (Japan)

Author keywords

Central limit theorem; Current fluctuation; Monte Carlo simulation; Shot noise; Thermal noise

Indexed keywords

ACOUSTIC WAVE SCATTERING; APPROXIMATION THEORY; BAND STRUCTURE; COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRONS; LIGHT SCATTERING; MONTE CARLO METHODS; PHONONS; PROBABILITY DENSITY FUNCTION; SEMICONDUCTING SILICON; THERMAL NOISE;

CURRENT FLUCTUATION; DRAIN CURRENT; MONTE CARLO DEVICE SIMULATION;

MOSFET DEVICES;

EID: 0033704152     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.1974     Document Type: Article

References (16)

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