Low resistivity ohmic contacts on 4H-silicon carbide for high power and high temperature device applications

Microelectronic Engineering

Volumn 60, Issue 1-2, 2002, Pages 261-268

  Lee, S K ^a   Zetterling, C M ^a   Ostling M ^a   Palmquist, J P ^b   Jansson, U ^b  

^a ROYAL INSTITUTE OF TECHNOLOGY KTH   (Sweden)

^b UPPSALA UNIVERSITY   (Sweden)

Author keywords

4H SiC; Ohmic contact resistance; Ohmic contacts; Power device

Indexed keywords

ELECTRIC CONDUCTIVITY OF SOLIDS; HIGH TEMPERATURE APPLICATIONS; RELIABILITY; SEMICONDUCTOR DOPING; SILICON CARBIDE; SUBSTRATES; TITANIUM CARBIDE;

HIGH POWER APPLICATIONS; POWER DEVICES;

OHMIC CONTACTS;

EID: 0036133162     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(01)00603-7     Document Type: Conference Paper

References (7)