Investigation of Ti/Al and TiN/Al thin films as the stable ohmic contact for p-type 4H-SiC

Journal of Electronic Materials

Volumn 32, Issue 6, 2003, Pages 501-504

  Lee, Byung Teak ^a   Shin, Jong Yoon ^a   Kim, Seon Hoon ^a   Kim, Jin Hyeok ^a   Han, Sang Yoon ^b   Lee, Jong Lam ^b  

^a Chonnam National University   (South Korea)

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

Ohmic contact; p SiC; Ti Al SiC; TiN Al SiC

Indexed keywords

ALUMINUM; ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; EVAPORATION; INTERFACES (MATERIALS); MORPHOLOGY; OHMIC CONTACTS; OXIDATION; TITANIUM; TITANIUM NITRIDE; TRANSMISSION ELECTRON MICROSCOPY;

HIGH TEMPERATURE ANNEALING; INTERFACIAL REACTION; SURFACE SMOOTHNESS;

SILICON CARBIDE;

EID: 0038160338     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-003-0133-z     Document Type: Article

References (10)

1. C.E. Weitzel and K.E. Moore, J. Electron. Mater. 27, 365 (1998).
2. L.M. Porter and R.F. Davis, Mater. Sci. Eng. B34, 83 (1995).
3. J. Crofton, L.M.Porter, and J.R. Williams, Phys. Status Solidi (b) 202, 581 (1997).
4. T.S. Hayes, F.T. Ray, K.P. Trumble, and E.P. Kvam, MRS Symp. Proc. 403, 489 (1996).
5. J. Crofton, L. Beyer, J.R. Williams, E.D. Luckowski, S.E. Mohney, and J.M. Delucca, Solid State Electron. 41, 1725 (1997).
6. K.V. Vailievskii, S.V. Rendakova, I.P. Nikitina, A.I. Babanin, A.N. Andreev, and K. Zekentes, Semiconductors 33, 1206 (1999).
7. B.-T. Lee, Y.-S. Shin, and J.H. Kim, J. Mater. Res. 15, 2284 (2000).
8. O. Nennewitz, L. Spiess, and V. Breternitz, Appl. Surf. Sci. 91, 347 (1995).
9. Z. Inoue, Y. Inomata, and H. Tanaka, J. Mater. Sci. 15, 575 (1980).
10. B.L. Kidwell, L.L. Oden, and R.A. McCune, J. Appl. Crystallogr. 17, 481 (1984).