Aluminum and boron ion implantations into 6H-SiC epilayers

Journal of Electronic Materials

Volumn 25, Issue 5, 1996, Pages 879-884

  Kimoto, Tsunenobu ^a   Itoh, Akira ^a   Matsunami, Hiroyuki ^a   Nakata, Toshitake ^a,b   Watanabe, Masanori ^a,b  

^a KYOTO UNIVERSITY   (Japan)

^b Ion Eng Res Institute Corporation   (Japan)

Author keywords

Electrical activation; Ion implantation; Rutherford backscattering spectroscopy; Silicon carbide

Indexed keywords

EID: 0039731169     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02666653     Document Type: Article

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