Stress evolution due to medium-energy ion bombardment of silicon

Acta Materialia

Volumn 54, Issue 2, 2006, Pages 483-491

  Kalyanasundaram, N ^a   Moore, M C ^a   Freund, J B ^a   Johnson, H T ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

Ion bombardment; Molecular dynamics calculations; Stress evolution

Indexed keywords

ARGON; COMPUTER SIMULATION; ION BOMBARDMENT; MOLECULAR DYNAMICS; STRESS ANALYSIS;

MOLECULAR DYNAMICS CALCULATIONS; STRESS EVOLUTION;

SILICON;

EID: 28844466387     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.actamat.2005.09.028     Document Type: Article

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