Ion bombardment induced morphology modifications on self-organized semiconductor surfaces

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 216, Issue 1-4, 2004, Pages 178-184

  Hofer, C ^a   Abermann, S ^a   Teichert, C ^a   Bobek, T ^b   Kurz, H ^b   Lyutovich, K ^c   Kasper, E ^c  

^a UNIVERSITY OF LEOBEN   (Austria)

^b RWTH AACHEN UNIVERSITY   (Germany)

^c UNIVERSITY OF STUTTGART   (Germany)

Author keywords

Atomic force microscopy; Ion bombardment; Self organization; SiGe nanostructures

Indexed keywords

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; ION BOMBARDMENT; LITHOGRAPHY; MAGNETIC THIN FILMS; MORPHOLOGY; SEMICONDUCTOR QUANTUM DOTS;

ION ENERGIES; ION EROSION; NANOPATTERNS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 1042288921     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2003.11.076     Document Type: Conference Paper

References (16)

1. Shchukin V.A., Bimberg D. Rev. Mod. Phys. 71:1999;1125.
2. Teichert C. Phys. Rep. 365:2002;335.
3. Facsko S., Dekorsy T., Koerdt C., Trappe C., Kurz H., Vogt A., Hartnagel H.L. Science. 285:1999;1551.
4. Bimberg D., Grundmann M., Ledentsov N.N. Quantum Dot Heterostructures. 1999;Wiley, Chichester.
5. Teichert C. Appl. Phys. A. 76:2003;653.
6. Frost F., Schindler A., Bigl F. Phys. Rev. Lett. 85:2000;4116.
7. Ludwig F., Eddy C.R., Malis O., Headrick R.L. Appl. Phys. Lett. 81:2002;2770.
8. Gago R., Vasquez L., Cuerno R., Varela M., Ballesteros C., Albella J.M. Appl. Phys. Lett. 78:2001;3316.
9. Bauer M., Oehme M., Lyutovich K., Kasper E. Thin Solid Films. 336:1998;104.
10. Lutz M.A., Feenstra R.M., LeGoues F.K., Moonay P.M., Chu J.O. Appl. Phys. Lett. 66:1995;724.
11. Jesson D.E., Chen K.M., Pennycook S.J., Thundat T., Warmack R.J. Science. 268:1995;1161.
12. Shiryaev S.Y., Jensen F., Hansen J.L., Petersen J.W., Larsen A.N. Phys. Rev. Lett. 78:1997;503-506.
13. Teichert C., Hofer C., Lyutovich K., Bauer M., Kasper E. Thin Solid Films. 380:2000;25.
14. Mo Y.-W., Savage D.E., Swartzentruber B.S., Lagally M.G. Phys. Rev. Lett. 65:1990;1020.
15. Frost F., Rauschenbach B. Appl. Phys. A. 77:2003;1.
16. Bradley R., Harper M. J. Vac. Sci. Technol. A. 6:1988;2390.