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Volumn 396, Issue , 1996, Pages 201-206
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Molecular dynamics studies of the ion beam induced crystallization in silicon
a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
ATOMS;
COMPUTER SIMULATION;
CRYSTAL DEFECTS;
CRYSTAL GROWTH;
CRYSTALLIZATION;
ION BOMBARDMENT;
MOLECULAR DYNAMICS;
RADIATION EFFECTS;
THERMAL EFFECTS;
ION INDUCED EFFECTS;
STILLINGER WEBER POTENTIAL;
SILICON;
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EID: 0029696525
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (10)
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References (20)
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