Transient sputtering of silicon by argon studied by molecular dynamics simulations

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 202, Issue , 2003, Pages 161-167

  Haddeman, Edwin F C ^a   Thijsse, Barend J ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Molecular dynamics; Potentials; Silicon; SIMS; Sputtering

Indexed keywords

AMORPHIZATION; COMPUTATIONAL METHODS; COMPUTER SIMULATION; ION BOMBARDMENT; SPUTTERING;

ATOMIC PROCESSES;

MOLECULAR DYNAMICS;

EID: 0037379024     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(02)01849-9     Document Type: Conference Paper

References (8)

1. Eckstein W. Computer Simulation of Ion-Solid Interactions. 1991;Springer, Berlin.
2. Baskes M.I. Mater. Sci. Eng. A. 261:1999;165.
3. Stillinger F.H., Weber T.A. Phys. Rev. B. 31:1985;5262.
4. Thijsse B.J. Phys. Rev. B. 65:2002;195207.
5. Zalm P.C. J. Appl. Phys. 54:1983;2660 J.G.M. van Berkum, P.C. Zalm, unpublished results.
6. Kubota N.A., Economou D.J. J. Appl. Phys. 83:1998;4055.
7. Aoki T., Chiba S., Matsuo J., Yamada I., Biersack J.P. Nucl. Instr. and Meth. B. 180:2001;312.
8. Balamane H., Halicioglu T., Tiller W.A. Phys. Rev. B. 46:1992;2250.