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Volumn 27, Issue 5, 1999, Pages 1416-1425

A molecular dynamics simulation of ultrathin oxide films on silicon: growth by thermal o atoms and sputtering by 100 eV Ar+ ions

Author keywords

Molecular dynamics; Oxide; Simulation; Sputtering; Surface cleaning

Indexed keywords

ARGON; COMPUTER SIMULATION; FILM GROWTH; ION BOMBARDMENT; MOLECULAR DYNAMICS; OXYGEN; SILICA; SILICON WAFERS; SPUTTERING; SURFACE CLEANING; SURFACE ROUGHNESS; ULTRATHIN FILMS;

EID: 0033204522     PISSN: 00933813     EISSN: None     Source Type: Journal    
DOI: 10.1109/27.799820     Document Type: Article
Times cited : (8)

References (49)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.