Molecular dynamics and quasidynamic simulations of low-energy particle bombardment effects during vapour-phase crystal growth: 10-50 eV Si and In atoms incident on (2×1)-terminated Si (001)

Thin Solid Films

Volumn 272, Issue 2, 1996, Pages 271-288

  Kitabatake, M ^a   Greene, J E ^b  

^a PANASONIC CORPORATION   (Japan)

^b University of Illinois at Urbana Champaign   (United States)

Author keywords

Computer simulation; Growth mechanism; Ion bombardment; Silicon

Indexed keywords

ACTIVATION ENERGY; ANNEALING; COMPUTER SIMULATION; CRYSTAL DEFECTS; DIFFUSION; ION BOMBARDMENT; IRRADIATION; MOLECULAR DYNAMICS; SEMICONDUCTING INDIUM; SEMICONDUCTING SILICON; THIN FILMS; VAPOR PHASE EPITAXY;

GROWTH MECHANISM; INTERSTITIAL; LATTICE RELAXATION; SURFACE SEGREGATION; VACANCY FORMATION;

CRYSTAL GROWTH;

EID: 0029779090     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(95)06953-4     Document Type: Article

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