Characterization of ultrathin SiO 2 films obtained by room temperature plasma oxidation of silicon

Proceedings of the International Conference on Microelectronics

Volumn 24 II, Issue , 2004, Pages 463-466

  Tinoco, J C ^a   Estrada, M ^a  

^a DEPARTAMENTO DE FÍSICA   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

DIRECT CONDUCTION; PARALLEL PLATE REACTORS; ROOM TEMPERATURE PLASMA OXIDATION (RTPO);

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC FILMS; ELLIPSOMETRY; MOSFET DEVICES; OXIDATION; PLASMAS; SILICA; SURFACE ROUGHNESS;

ULTRATHIN FILMS;

EID: 3142663941     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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