Growth of ultrathin SiO2 on Si by surface irradiation with an O2+Ar electron cyclotron resonance microwave plasma at low temperatures

Journal of Applied Physics

Volumn 85, Issue 3, 1999, Pages 1911-1915

  Liu, Y C ^a,b   Ho, L T ^b   Bai, Y B ^b   Li, T J ^b   Furakawa, K ^c   Gao, D W ^c   Nakashima, H ^c   Muroaka, K ^c  

^a NORTHEAST NORMAL UNIVERSITY   (China)

^b JILIN UNIVERSITY   (China)

^c KYUSHU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001505959     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.369183     Document Type: Article

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