Photo-CVD process for ultra thin SiO2 films

Microelectronics Reliability

Volumn 44, Issue 5, 2004, Pages 885-888

  Sanchez V ^a   Munguia J ^a   Estrada, M ^a  

^a DEPARTAMENTO DE FÍSICA   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY LAYERS; CHEMICAL VAPOR DEPOSITION; MOS CAPACITORS; PARTIAL PRESSURE; PHOTOCHEMICAL REACTIONS; SILANES; SURFACE PHENOMENA; ULTRATHIN FILMS;

FREE ELECTRON MASS; GAS FLOW RATIO;

SILICA;

EID: 1842864276     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2004.02.003     Document Type: Article

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