Electrical properties of thin gate dielectric grown by rapid thermal oxidation

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 18, Issue 6, 2000, Pages 2986-2991

  Lee, J S ^a   Chang, S J ^a   Sun, S C ^b   Jang, S M ^b   Yu, M C ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC PROPERTIES; HIGH TEMPERATURE EFFECTS; MOSFET DEVICES; OXIDATION; OXIDES; PRESSURE EFFECTS; SILICON; STEAM GENERATORS; THIN FILMS;

RAPID THERMAL OXIDATION (RTO);

DIELECTRIC FILMS;

EID: 0034315336     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1312374     Document Type: Article

References (16)

1. H. Kim and H. Hwang, Jpn. J. Appl. Phys., Part 2 38, L99 (1999).
2. B. Maiti, P. J. Tobin, Y. Okada, K. G. Reid, S. A. Ajuria, R. I. Hegde, and V. Kaushik, IEEE Electron Device Lett. 17, 279 (1996).
3. Y. Okada, P. J. Tobin, P. Rushbrook, and W. L. Dehart, IEEE Trans. Electron Devices 41, 191 (1994).
4. A. B. Joshi, G. Yoon, J. Kim, G. Q. Lo, and D.-L. Kwong, IEEE Trans. Electron Devices 40, 1437 (1993).
5. H. Hwang, W. Ting, B. Maiti, D.-L. Kwong, and J. Lee, Appl. Phys. Lett. 57, 1010 (1990).
6. Z.-Q. Yao, H. B. Harrison, S. Dimitrijev, and Y. T. Yeow, IEEE Electron Device Lett. 16, 345 (1995).
7. H. Hwang, W. Ting, D.-L. Kwong, and J. Lee, Tech. Dig. Int. Electron Devices Meet. 1990, 421 (1990).
8. Y. Murakami, T. Shiota, and T. Shingyouji, J. Appl. Phys. 75, 5302 (1994).
9. T. Hori, H. Iwasaki, and K. Tsuji, IEEE Trans. Electron Devices 36, 340 (1989).
10. S. Banerjee, Y. J. Park, D. R. Lee, Y. H. Jeong, K.-B. Lee, S. B. Yoon, B. H. Chio, and W.-J. Cho, Appl. Phys. Lett. 72, 433 (1998).
11. T. Sakoda, M. Matsumura, and Y. Nishioka, Appl. Surf. Sci. 117, 241 (1997).
12. Y. Nissan-Cohen and T. Gorczyca, IEEE Electron Device Lett. 9, 287 (1988).
13. R. P. Vasquez and A. Madhukar, Appl. Phys. Lett. 47, 998 (1985).
14. Y. Hokari, Solid-State Electron. 33, 75 (1990).
15. E. Hasegawa, A. Ishitani, K. Akimoto, M. Tsukiji, and N. Ohta, J. Electrochem. Soc. 142, 273 (1995).
16. T. Hori, IEEE Trans. Electron Devices 37, 2058 (1990).