Growth kinetics of ultra-thin N 2 O oxynitrides for gate insulator

Applied Surface Science

Volumn 117-118, Issue , 1997, Pages 136-140

  Matsumura, Mieko ^a   Nishioka, Yasushiro ^a  

^a Texas Instruments Japan Ltd   (Japan)

Author keywords

Gate oxides; N O bonding; N 2 O; Oxynitride; Ultrathin

Indexed keywords

CHEMICAL BONDS; COMPOSITION EFFECTS; ELECTRIC INSULATORS; FILM GROWTH; FLOW OF FLUIDS; GATES (TRANSISTOR); HIGH TEMPERATURE EFFECTS; NITRIDES; NITROGEN OXIDES; SILICON WAFERS; X RAY PHOTOELECTRON SPECTROSCOPY;

GATE OXIDES; OXYNITRIDES;

ULTRATHIN FILMS;

EID: 0031548532     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)80067-0     Document Type: Article

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