Highly reliable ultrathin silicon oxide film formation at low temperature by oxygen radical generated in high-density krypton plasma

IEEE Transactions on Electron Devices

Volumn 48, Issue 8, 2001, Pages 1550-1555

  Sekine, Katsuyuki ^b   Saito, Yuji ^c   Hirayama, Masaki ^c   Ohmi, Tadahiro ^a,c  

^a IEEE

^b Process and Manufacturing Engineering Center   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

Author keywords

MOS capacitors; Oxygen radical; Silicon oxide

Indexed keywords

ACTIVATION ENERGY; DIELECTRIC PROPERTIES; PLASMA DENSITY; SEMICONDUCTING FILMS; SILICA; TEMPERATURE; ULTRATHIN FILMS;

DIELECTRIC STRENGTH; HIGH DENSITY KRYPTON PLASMA; SILICON OXIDE FILMS;

MOS CAPACITORS;

EID: 0035423581     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.936559     Document Type: Article

References (14)

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