A study on the oxidation kinetics of silicon in inductively coupled oxygen plasma

Journal of Applied Physics

Volumn 86, Issue 7, 1999, Pages 4004-4007

  Choi, Yong Woo ^a   Ahn, Byung Tae ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000330945     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371320     Document Type: Article

References (15)

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