Effect of stochastic dead space on noise in avalanche photodiodes

IEEE Transactions on Electron Devices

Volumn 51, Issue 5, 2004, Pages 693-700

  Kwon, Oh Hyun ^a   Hayat, Majeed M ^a   Campbell, Joe C ^b   Saleh, Bahaa E A ^c   Teich, Malvin Carl ^c  

^a University of New Mexico   (United States)

^b The University of Texas at Austin   (United States)

^c Boston University   (United States)

Author keywords

Avalanche photodiodes (APDs); Excess noise factor; GaAs; Impact ionization; Ionization coefficient; Ionization threshold energy; Stochastic dead space (SDS)

Indexed keywords

AVALANCHE DIODES; ELECTRIC FIELD EFFECTS; IMPACT IONIZATION; PROBABILITY DENSITY FUNCTION;

IONIZATION THRESHOLD ENERGY; STOCHASTIC DEAD SPACE;

PHOTODIODES;

EID: 2442585572     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.825798     Document Type: Article

References (38)

1. R. J. McIntyre, "Multiplication noise in uniform avalanche photodiodes," IEEE Trans. Electron Devices, vol. ED-13, pp. 164-168, Jan. 1966.
2. + diodes," IEEE Trans. Electron Devices, vol. 45, pp. 2102-2107, Oct. 1998.
3. + GaAs avalanche photodiodes," IEEE Trans. Electron Devices, vol. 45, pp. 1804-1810, Aug. 1998.
4. M. A. Saleh, M. M. Hayat, B. E. A. Saleh, and M. C. Teich, "Dead-space-based theory correctly predicts excess noise factor for thin GaAs and AlGaAs avalanche photodiodes," IEEE Trans. Electron Devices, vol. 47, pp. 625-633, Mar. 2000.
5. M. A. Saleh, M. M. Hayat, P. P. Sotirelis, A. L. Holmes Jr., J. C. Campbell, B. E. A. Saleh, and M. C. Teich, "Impact-ionization and noise characteristics of thin III-V avalanche photodiodes," IEEE Trans. Electron Devices, vol. 48, pp. 2722-2731, Dec. 2001.
6. R. J. McIntyre, "A new look at impact ionization - part I: A theory of gain, noise, breakdown probability, and frequency response," IEEE Trans. Electron Devices, vol. 46, pp. 1623-1631, Aug. 1999.
7. P. Yuan, K. A. Anselm, C. Hu, H. Nie, C. Lenox, A. L. Holmes Jr, B. G. Streetman, J. C. Campbell, and R. J. McIntyre, "A new look at impact ionization - part II: gain and noise in short avalanche photodiodes," IEEE Trans. Electron Devices, vol. 46, pp. 1632-1639, Aug. 1999.
8. A. Spinelli and A. L. Lacaita, "Mean gain of avalanche photodiodes in a dead space model," IEEE Trans. Electron Devices, vol. 43, pp. 23-30, Jan. 1996.
9. C. Hu, K. A. Anselm, B. G. Streetman, and J. C. Campbell, "Noise characteristics of thin multiplication region GaAs avalanche photodiodes," Appl. Phys. Lett., vol. 69, pp. 3734-3736, Dec. 1996.
10. D. S. Ong, K. F. Li, G. J. Rees, J. P. R. David, and P. N. Robson, "A simple model to determine multiplication and noise in avalanche photodiodes," J. Appl. Phys., vol. 83, pp. 3426-3428, Mar. 1998.
11. P. Yuan, C. C. Hansing, K. A. Anselm, C. V. Lenox, H. Nie, A. L. Holmes Jr., B. G. Streetman, and J. C. Campbell, "Impact ionization characteristics of III-V semiconductors for a wide range of multiplication region thicknesses," IEEE J. Quantum Electron., vol. 36, pp. 198-204, Feb. 2000.
12. M. M. Hayat, W. L. Sargeant, and B. E. A. Saleh, "Effect of dead space on gain and noise in Si and GaAs avalanche photodiodes," IEEE J. Quantum Electron., vol. 28, pp. 1360-1365, 1992.
13. B. E. A. Saleh, M. M. Hayat, and M. C. Teich, "Effect of dead space on the excess noise factor and time response of avalanche photodiodes," IEEE Trans. Electron Devices, vol. 37, pp. 1976-1984, Oct. 1990.
14. J. D. Beck, C.-F. Wan, M. A. Kinch, J. E. Robinson, F. Ma, and J. C. Campbell, "The HgCdTe electron avalanche photodiode," LEOS, vol. II, pp. 849-850, 2003.
15. 0.3Te avalanche photodiodes and resonance phenomenon in the multiplication noise," Appl. Phys. Lett., vol. 83, pp. 785-787, July 2003.
16. J. S. Ng, C. H. Tan, B. K. Ng, P. J. Hambleton, J. P. R. David, G. J. Rees, A. H. You, and D. S. Ong, "Effect of dead space on avalanche speed," IEEE Trans. Electron Devices, vol. 49, pp. 544-549, Apr. 2002.
17. P. J. Hambleton, S. A. Plimmer, J. P. R. David, and G. J. Rees, "Simulated current response in avalanche photodiodes," J. Appl. Phys., vol. 91, pp. 2107-2111, Feb. 2002.
18. M. M. Hayat, O. Kwon, Y. Pan, P. Sotirelis, J. C. Campbell, B. E. A. Saleh, and M. C. Teich, "Gain-bandwidth characteristics of thin avalanche photodiodes," IEEE Trans. Electron Devices, vol. 49, pp. 770-781, May 2002.
19. P. Yuan, S. Wang, X. Sun, X. G. Zheng, A. L. Holmes Jr., and J. C. Campbell, "Avalanche photodiodes with an impact-ionization-engineered multiplication region," IEEE Photon. Technol. Lett., vol. 12, pp. 1370-1372, Oct. 2000.
20. M. M. Hayat, O. Kwon, S. Wang, J. C. Campbell, B. E. A. Saleh, and M. C. Teich, "Boundary effects on multiplication noise in thin heterostructure avalanche photodiodes: theory and experiment," IEEE Trans. Electron Devices, vol. 49, pp. 2114-2123, Dec. 2002.
21. 0.4As - GaAs avalanche photodiodes," IEEE J. Quantum Electron., vol. 39, pp. 1287-1296, Oct. 2003.
22. C. Groves, D. S. Ong, J. P. R. David, and G. J. Rees, Modeling of Avalanche Multiplication and Noise Across a Heterojunction.
23. M. M. Hayat, Ü. Sakoǧlu, O. Kwon, S. Wang, J. C. Campbell, B. E. A. Saleh, and M. C. Teich, "Breakdown probabilities for thin heterostructure avalanche photodiodes," IEEE J. Quantum Electron., vol. 39, pp. 179-185, Jan. 2003.
24. S. Wang, F. Ma, X. Li, G. Karve, X. Zheng, and J. C. Campbell, "Analysis of breakdown probabilities in avalanche photodiodes using a history-dependent analytical model," Appl. Phys. Lett., vol. 82, pp. 1971-1973, Mar. 2003.
25. Y. Okuto and C. R. Crowell, "Ionization coefficients in semiconductors: a nonlocalized property," Phys. Rev. B, Condens. Matter, vol. 10, pp. 4284-4296, Nov. 1974.
26. M. M. Hayat, B. E. A. Saleh, and M. C. Teich, "Effect of dead space on gain and noise of double-carrier-multiplication avalanche photodiodes," IEEE Trans. Electron Devices, vol. 39, pp. 546-552, Mar. 1992.
27. B. I. Cantor and M. C. Teich, "Dead-time-corrected photocounting distributions for laser radiation," J. Opt. Soc. Amer., vol. 65, pp. 786-791, 1975.
28. B. E. A. Saleh, Photoelectron Statistics. New York: Springer-Verlag, 1978, pp. 272-279.
29. P. R. Prucnal and M. C. Teich, "Refractory effects in neural counting processes with exponentially decaying rates," IEEE Trans. Syst., Man, Cybernetics, vol. SMC-13, pp. 1028-1033, 1983.
30. A. Spinelli, A. Pacelli, and A. L. Lacaita, "Dead space approximation for impact ionization in silicon," Appl. Phys. Lett., vol. 69, pp. 3707-3709, 1996.
31. + diodes," J. Appl. Phys., vol. 87, pp. 7885-7891, June 2000.
32. S. A. Plimmer, J. P. R. David, B. Jacob, and G. J. Rees, "Impact ionization probabilities as functions of two-dimensional space and time," J. Appl. Phys., vol. 89, pp. 2742-2751, Mar. 2001.
33. M. C. Teich, L. Matin, and B. I. Cantor, "Refractoris in the maintained discharge of the cat's retinal ganglion cell," J. Opt. Soc. Amer., vol. 68, pp. 386-402, 1978.
34. N. Sano, T. Aoki, and A. Yoshii, "Soft and hard ionization thresholds in Si and GaAs," Appl. Phys. Lett., vol. 55, pp. 1418-1420, Oct. 1989.
35. S. A. Plimmer, J. P. R. David, D. S. Ong, and K. R. Li, "A simple model for avalanche multiplication including deadspace effect," IEEE Trans. Electron Devices, vol. 46, pp. 769-775, Apr. 1999.
36. M. C. Teich and P. Diament, "Relative refractories in visual information processing," Biol. Cybernetics, vol. 38, pp. 187-191, 1980.
37. C. H. Tan, J. P. R. David, G. J. Rees, and R. C. Tozer, "Treatment of soft threshold in impact ionization," J. Appl. Phys., vol. 90, pp. 2538-2543, Sep. 2001.
38. C. L. Anderson and C. R. Crowell, "Threshold energies for electron-hole pair production by impact ionization in semiconductors," Phys. Rev. B, Condens. Matter, vol. 5, pp. 2267-2272, Mar. 1972.