Boundary effects on multiplication noise in thin heterostructure avalanche photodiodes: Theory and experiment

IEEE Transactions on Electron Devices

Volumn 49, Issue 12, 2002, Pages 2114-2123

  Hayat, Majeed M ^a   Kwon, Oh Hyun ^a   Wang, Shuling ^b   Campbell, Joe C ^b   Saleh, Bahaa E A ^c   Teich, Malvin C ^c  

^a University of New Mexico   (United States)

^b The University of Texas at Austin   (United States)

^c Boston University   (United States)

Author keywords

Bandgap boundary effects; Carrier injection; Dead space; Excess noise factor; Heterostructure APDs; Impact ionization; Ionization threshold energy; Thin APDs

Indexed keywords

AVALANCHE DIODES; CALCULATIONS; CARRIER CONCENTRATION; ELECTRIC FIELD EFFECTS; ENERGY GAP; HETEROJUNCTIONS; IMPACT IONIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SPURIOUS SIGNAL NOISE;

BANDGAP BOUNDARY EFFECT; BANDGAP-TRANSITION EFFECT; CARRIER INJECTION; HETEROSTRUCTURE AVALANCHE PHOTODIODE; IONIZATION THRESHOLD ENERGY;

PHOTODIODES;

EID: 0036999718     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.805573     Document Type: Article

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