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Volumn 12, Issue 10, 2000, Pages 1370-1372

Avalanche Photodiodes with an Impact-Ionization-Engineered Multiplication Region

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EID: 0001049642     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.883833     Document Type: Article
Times cited : (71)

References (26)
  • 1
    • 84922644221 scopus 로고
    • Multiplication noise in uniform avalanche diodes
    • Jan.
    • R. J. McIntyre, "Multiplication noise in uniform avalanche diodes," IEEE Trans. Electron Devices, vol. ED-13, no. 1, pp. 164-168, Jan. 1966.
    • (1966) IEEE Trans. Electron Devices , vol.ED-13 , Issue.1 , pp. 164-168
    • McIntyre, R.J.1
  • 2
    • 0015360553 scopus 로고
    • The distribution of gains in uniformly multiplying avalanche photodiodes: Theory
    • June
    • _, "The distribution of gains in uniformly multiplying avalanche photodiodes: Theory," IEEE Trans. Electron Devices, vol. ED-19, pp. 703-713, June 1972.
    • (1972) IEEE Trans. Electron Devices , vol.ED-19 , pp. 703-713
  • 3
    • 0000512292 scopus 로고
    • Avalanche-photodiode frequency response
    • R. B. Emmons, "Avalanche-photodiode frequency response," J. Appl. Phys., vol. 38, no. 9, pp. 3705-3714, 1967.
    • (1967) J. Appl. Phys. , vol.38 , Issue.9 , pp. 3705-3714
    • Emmons, R.B.1
  • 4
    • 0024627297 scopus 로고
    • Multiplication noise of wide-bandwidth InP/InGaAsP/In-GaAs avalanche photodiodes
    • Mar.
    • J. C. Campbell, S. Chandrasekhar, W. T. Tsang, G. J. Qua, and B. C. Johnson, "Multiplication noise of wide-bandwidth InP/InGaAsP/In-GaAs avalanche photodiodes," J. Lightwave Technol., vol. 7, pp. 473-477, Mar. 1989.
    • (1989) J. Lightwave Technol. , vol.7 , pp. 473-477
    • Campbell, J.C.1    Chandrasekhar, S.2    Tsang, W.T.3    Qua, G.J.4    Johnson, B.C.5
  • 5
    • 0027611046 scopus 로고
    • High-frequency performance of separate absorption grading, charge, and multiplication InP/InGaAs avalanche photodiodes
    • June
    • L. E. Tarof, J. Yu, R. Bruce, D. G. Knight, T. Baird, and B. Oosterbrink, "High-frequency performance of separate absorption grading, charge, and multiplication InP/InGaAs avalanche photodiodes," IEEE Photon. Technol. Lett., vol. 5, pp. 672-674, June 1993.
    • (1993) IEEE Photon. Technol. Lett. , vol.5 , pp. 672-674
    • Tarof, L.E.1    Yu, J.2    Bruce, R.3    Knight, D.G.4    Baird, T.5    Oosterbrink, B.6
  • 6
    • 0001685402 scopus 로고    scopus 로고
    • Noise characteristics of thin multiplication region GaAs avalanche photodiodes
    • C. Hu, K. A. Anselm, B. G. Streetman, and J. C. Campbell, "Noise characteristics of thin multiplication region GaAs avalanche photodiodes," Appl. Phys. Lett., vol. 69, no. 24, pp. 3734-3736, 1996.
    • (1996) Appl. Phys. Lett. , vol.69 , Issue.24 , pp. 3734-3736
    • Hu, C.1    Anselm, K.A.2    Streetman, B.G.3    Campbell, J.C.4
  • 13
    • 0032023357 scopus 로고    scopus 로고
    • Universality of the 1/3 shot-noise suppression factor in nondegenerate diffusive conductors
    • T. Gonzalez, C. Gonzalez, J. Mateos, D. Pardo, L. Reggiani, O. M. Bulashenko, and J. M. Rubi, "Universality of the 1/3 shot-noise suppression factor in nondegenerate diffusive conductors," Phys. Rev. Lett., vol. 80, no. 13, pp. 2901-2904, 1998.
    • (1998) Phys. Rev. Lett. , vol.80 , Issue.13 , pp. 2901-2904
    • Gonzalez, T.1    Gonzalez, C.2    Mateos, J.3    Pardo, D.4    Reggiani, L.5    Bulashenko, O.M.6    Rubi, J.M.7
  • 14
    • 0000237736 scopus 로고    scopus 로고
    • Monte Carlo study of shot noise suppression
    • A. Reklaitis and L. Reggiani, "Monte Carlo study of shot noise suppression," J. Appl. Phys., vol. 82, no. 6, pp. 3161-3163, 1997.
    • (1997) J. Appl. Phys. , vol.82 , Issue.6 , pp. 3161-3163
    • Reklaitis, A.1    Reggiani, L.2
  • 17
    • 0002528786 scopus 로고
    • Enhancement of electron impact ionization in a superlattice: A new avalanche photodiode with a large ionization rate ratio
    • F. Cappasso, W. T. Tsang, A. L. Hutchinson, and G. F. Williams, "Enhancement of electron impact ionization in a superlattice: A new avalanche photodiode with a large ionization rate ratio," Appl. Phys. Lett., vol. 40, p. 38, 1982.
    • (1982) Appl. Phys. Lett. , vol.40 , pp. 38
    • Cappasso, F.1    Tsang, W.T.2    Hutchinson, A.L.3    Williams, G.F.4
  • 19
    • 0027543506 scopus 로고
    • Monte Carlo analysis of band structure influence on impact ionization in InP
    • V. Chandramouli and C. M. Maziar, "Monte Carlo analysis of band structure influence on impact ionization in InP," Solid-State Electron., vol. 36, pp. 285-290, 1993.
    • (1993) Solid-State Electron. , vol.36 , pp. 285-290
    • Chandramouli, V.1    Maziar, C.M.2
  • 23
    • 0016972209 scopus 로고
    • A model for reach-through avalanche photodiodes (RAPD's)
    • T. Kaneda, H. Matsumoto, and T. Yamaoka, "A model for reach-through avalanche photodiodes (RAPD's)," J. Appl. Phys., vol. 47, pp. 3135-3139, 1976.
    • (1976) J. Appl. Phys. , vol.47 , pp. 3135-3139
    • Kaneda, T.1    Matsumoto, H.2    Yamaoka, T.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.