Impact-ionization and noise characteristics of thin III-V avalanche photodiodes

IEEE Transactions on Electron Devices

Volumn 48, Issue 12, 2001, Pages 2722-2731

  Saleh, Mohammad A ^b   Hayat, Majeed M ^a,c   Sotirelis, Paul P ^a,d,e   Holmes, Archie L ^f   Campbell, Joe C ^a,f   Saleh, Bahaa E A ^a,g   Teich, Malvin Carl ^a,g  

^a IEEE

^b UNIVERSITY OF DAYTON   (United States)

^c University of New Mexico   (United States)

^d UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^e WRIGHT PATTERSON AIR FORCE BASE   (United States)

^f The University of Texas at Austin   (United States)

^g Boston University   (United States)

Author keywords

AlGaAs; Dead space; Excess noise factor; GaAs; Gain; Impact ionization; InAlAs; InP; Ionization coefficients; Ionization threshold energy; Thin avalanche photodiodes

Indexed keywords

AVALANCHE DIODES; BANDWIDTH; ELECTRIC FIELD EFFECTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SPURIOUS SIGNAL NOISE;

AVALANCHE PHOTODIODES (APD);

PHOTODIODES;

EID: 0035696969     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.974696     Document Type: Article

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