Optimal excess noise reduction in thin heterojunction Al0.6Ga0.4As-GaAs avalanche photodiodes

IEEE Journal of Quantum Electronics

Volumn 39, Issue 10, 2003, Pages 1287-1296

  Kwon, Oh Hyun ^a   Hayat, Majeed M ^a   Wang, Shuling ^b   Campbell, Joe C ^b   Holmes Jr , Archie ^b   Pan, Yi ^c   Saleh, Bahaa E A ^d   Teich, Malvin C ^d  

^a University of New Mexico   (United States)

^b The University of Texas at Austin   (United States)

^c GEORGIA STATE UNIVERSITY   (United States)

^d Boston University   (United States)

Author keywords

Al0.6Ga0.4As; Avalanche photodiodes; Dead space; Excess noise factor; GaAs; Heterostructure APDs; Impact ionization; Initial energy effect; Ionization threshold energy; Optimization

Indexed keywords

AVALANCHE DIODES; CALCULATIONS; ELECTRON ENERGY LEVELS; HETEROJUNCTIONS; INTERFERENCE SUPPRESSION; SEMICONDUCTING ALUMINUM COMPOUNDS; SPURIOUS SIGNAL NOISE;

AVALANCHE PHOTODIODES; DEAD SPACE MULTIPLICATION RECURRENCE THEORY; INITIAL ENERGY EFFECT;

PHOTODIODES;

EID: 0141952909     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2003.817671     Document Type: Article

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