Breakdown probabilities for thin heterostructure avalanche photodiodes

IEEE Journal of Quantum Electronics

Volumn 39, Issue 1, 2003, Pages 179-185

  Hayat, Majeed M ^a   Sakoǧlu, Ünal ^a   Kwon, Oh Hyun ^a   Wang, Shuling ^b   Campbell, Joe C ^b   Saleh, Bahaa E A ^c   Teich, Malvin C ^c  

^a MSC01 1070   (United States)

^b The University of Texas at Austin   (United States)

^c Boston University   (United States)

Author keywords

Bandgap boundary effects; Breakdown probability; Breakdown voltage; Dead space; Heterostructures; Impact ionization; Thin avalanche photodiodes

Indexed keywords

AVALANCHE DIODES; ELECTRIC BREAKDOWN OF SOLIDS; HETEROJUNCTIONS; IMPACT IONIZATION; MATHEMATICAL MODELS; PROBABILITY; PROBABILITY DENSITY FUNCTION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

AVALANCHE PHOTODIODES; BREAKDOWN PROBABILITY;

PHOTODIODES;

EID: 0037247405     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2002.806217     Document Type: Article

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