Contribution of numerical simulation to silicon carbide bulk growth and epitaxy

Journal of Physics Condensed Matter

Volumn 16, Issue 17, 2004, Pages

  Meziere, Jérôme ^a,b   Pons, Michel ^a   Di Cioccio, Léa ^b   Blanquet, Elisabeth ^a   Ferret, Pierre ^b   Dedulle, Jean Marc ^c   Baillet, Francis ^a   Pernot, Etienne ^c   Anikin, Michail ^c   Madar, Roland ^c   Billon, Thierry ^b  

^a UNIV GRENOBLE ALPES   (France)

^b CEA GRENOBLE   (France)

^c GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; EPITAXIAL GROWTH; HIGH TEMPERATURE EFFECTS; MASS TRANSFER; MATHEMATICAL MODELS; SUBLIMATION; THIN FILMS;

BULK GROWTH; HIGH TEMPERATURE DEVICES; PHYSICAL VAPOR TRANSPORT; RESIDUAL DEFECTS;

SILICON CARBIDE;

EID: 2442581431     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/16/17/009     Document Type: Article

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