Advances in SiC materials and technology for schottky diode applications

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 1119-1124

  Di Cioccio, L ^a   Billon, T ^a  

^a CEA LETI   (France)

Author keywords

Characterization; Diodes; Epitaxy; Ion implantation; Schottky; SiC

Indexed keywords

DIODES; EPITAXIAL GROWTH; ION IMPLANTATION; SCHOTTKY BARRIER DIODES; SILICON WAFERS; SUBSTRATES; PASSIVATION;

DEVICE PERFORMANCE; INDUSTRIAL EQUIPMENT; INDUSTRIAL PRODUCTION; PASSIVATION PROCESS; REPRODUCIBILITIES; SCHOTTKY; SCHOTTKY DEVICES; SUBSTRATE QUALITY; EPITAXIAL FILMS;

SILICON CARBIDE;

EID: 0036435128     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.389-393.1119     Document Type: Conference Paper

References (24)

1. St. G. Muller, R.C. Glass, H. M. Hobgood, V.F. Tsvetkov et al. Materials Science and engineering B Vol. 80,2001, pp. 327, 331
2. P. G. Neudeck Mat. Science forum Vol. 338-342 (2000) pp. 1161-1166
3. T. Kimoto, H. Yano, S. Tamura et al., Mat. Science forum Vol. 353-356 (2001) pp. 543-548
4. R. Rupp, M. Treu, A. Mauder et al.. Mat. Science forum Vol. 338-342 (2001) pp. 1167-70.
5. C V Reddy and V. Narayamurti, J. of applied phys., vol 89, num. 10 (2001) pp 5797-99.
6. E. Pemod, E Neyret, C Moulin, P. Pemot-Rejmankova et al., this conference
7. A Ellison Thesis 1999 Linkoping university.
8. C. Moulin Thesis 2001 INPG France.
9. R. Glass, CREE, private communication
10. P Vicente, E. Pemod, D Chaussende, this conference.
11. M. F. Barthes, P Desgardin, L. Henry et al., this conference
12. C. Banc, E Bano, T Ouisse et al., this conferencc
13. Epigress, press release, this conference.
14. C.H Carter Jr. V.F. Tsevtkov, R.C. Glass and al. Materials Science and engineering B Vol. 61-62(1999) p. 1-8.
15. M. Pons, J. Meziere, S. Wang Tang Kuan et al., this conference
16. Epigress, this conference.
17. F. Lctertrc, E. Jalaguicr. L. Di Cioccio et al., this conference.
18. D. Defives, O. Durand, F. Wyczisk, J. Olivier, O. Noblanc and C. Brylinski, International Conference on Silicon Carbide and Related Materials, 10-15 October 1999, pp. 411-414
19. A.S. Royet, T. Ouisse, T. Billon, C. Jaussaud and B. Cabon, 2nd European Conference on Silicon Carbide and Related Materials, 2-4 September 1998, pp. 402-405
20. F. Templier, P. Ferret, L. Di Cioccio et al., this conference
21. H. Itoh, T. Troffer and G. Pensl, Materials Science Forum Vols. 264-268, 685 (1998)
22. L. Patrick and W. Choykc, Phys. Rev. B 5, 3253 (1972)
23. J.M. Bluet, J. Pemot,. J.F. Michaud, S. Contreras, T. Billon, J.L. Robert and J. Camassel International Conference on Silicon Carbide and Related Materials, 10-15 October 1999, pp. 885-888
24. L. Lipkin, M. Das, and J. Palmour, “Challenges and State-of-the-art of Oxides on SiC, Mat. Res. Soc. Symp. Proc., Vol. 640 (2001)