Simulation of the large-area growth of homoepitaxial 4H-SiC by chemical vapor deposition

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 223-226

  Pons, Michel ^a   Mezière, Jerome ^a   Kuan, Stephane Wan Tana ^b   Blanquet, Elisabeth ^a   Ferret, Pierre ^b   Di Cioccio, Lea ^b   Billon, Thierry ^b   Madar, Roland ^c  

^a UNIV GRENOBLE ALPES   (France)

^b CEA GRENOBLE   (France)

^c LABORATOIRE DES MATÉRIAUX ET DU GÉNIE PHYSIQUE   (France)

Author keywords

CVD; Epitaxy; Kinetics; Modeling

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DEFECT DENSITY; ENZYME KINETICS; EPITAXIAL GROWTH; MASS TRANSFER; MODELS; SILICON WAFERS;

ELEVATED TEMPERATURE; ENGINEERING PROBLEMS; HEAT AND MASS TRANSFER; HOT-WALL REACTORS; KINETIC DATABASE; LOW DEFECT DENSITIES; THICK EPITAXIAL; THICKNESS UNIFORMITY;

SILICON CARBIDE;

EID: 0037585830     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028hnnwscientific.net/MSF.389-393.223     Document Type: Conference Paper

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