Heat transfer and kinetics of bulk growth of silicon carbide

Journal of Crystal Growth

Volumn 230, Issue 1-2, 2001, Pages 239-246

  Chen, Q S ^a   Zhang, H ^a   Prasad, V ^a  

^a Stony Brook University   (United States)

Author keywords

A1. Computer simulation; A1. Diffusion; A1. Growth models; A1. Mass transfer; A2. Growth from vapor; B2. Semiconducting silicon

Indexed keywords

COMPUTER SIMULATION; DIFFUSION IN SOLIDS; HEAT CONDUCTION; HEAT RADIATION; INDUCTION HEATING; MASS TRANSFER; MATHEMATICAL MODELS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SUPERSATURATION; THERMAL GRADIENTS;

MAGNETIC VECTOR POTENTIAL THEORY;

SILICON CARBIDE;

EID: 0035425749     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01338-0     Document Type: Conference Paper

References (17)

1. Bulk crystal growth by physical vapour transport