Silicon carbide epitaxy in a vertical CVD reactor: Experimental results and numerical process simulation

Physica Status Solidi (B) Basic Research

Volumn 202, Issue 1, 1997, Pages 281-304

  Rupp, R ^a   Makarov, Yu N ^b   Behner, H ^a   Wiedenhofer, A ^a  

^a SIEMENS AG   (Germany)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0031525360     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3951(199707)202:1<281::AID-PSSB281>3.0.CO;2-Y     Document Type: Article

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