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Journal of Crystal Growth

Volumn 236, Issue 1-3, 2002, Pages 101-112

Nitrogen doping of epitaxial silicon carbide

(5) Forsberg, U a Danielsson, O a Henry, A a Linnarsson, M K b Janzen E a

a LINKÖPING UNIVERSITY (Sweden)

b ROYAL INSTITUTE OF TECHNOLOGY (Sweden)

Author keywords

A1. Doping; A3. Hot wall epitaxy; B2. Superconducting materials

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; NITROGEN; SEMICONDUCTOR DOPING;

HOT WALL EPITAXY; NITROGEN DOPING;

SILICON CARBIDE;

EID: 0036499678 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)02198-4 Document Type: Article

Times cited : (76)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.