Simulation of high-temperature SiC epitaxial growth using vertical, quasi-hot-wall CVD reactor

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 227-230

  Hasegawa, M ^a,b   Miyauchi, A ^a,b   Masahara, K ^a   Ishida, Y ^c   Takahashi, T ^c   Ohno, T ^a   Nishio, J ^a   Suzuki, T ^a   Tanaka, T ^a   Yoshida, S ^c   Arai, K ^c  

^a R&D Association for Future Electron Devices   (Japan)

^b HITACHI LTD   (Japan)

^c NONE

Author keywords

Growth rate; Hot wall CVD; Hydrogen etching; Simulation

Indexed keywords

ETCHING; GROWTH RATE; SILICON CARBIDE; TEMPERATURE DISTRIBUTION;

COMPUTED FLOWS; GAS VELOCITY DISTRIBUTION; HIGH TEMPERATURE; HOT WALL; HYDROGEN ETCHING; INCREASING TEMPERATURES; SIMULATION; TEMPERATURE DEPENDENCE;

CHEMICAL VAPOR DEPOSITION;

EID: 34247272986     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028hnnwscientific.net/MSF.389-393.227     Document Type: Conference Paper

References (2)

1. K. Kushibe et al., Mater. Sci. Forum, 338-342,169 (2000)
2. Y. Ishida et al., Ext. Abst. 62nd Autumn Meeting Jpn. Soc. Appl. Phys., 310 (2100) (in Japanese).