SCOPUS 정보 검색 플랫폼

Surface and Coatings Technology

Volumn 94-95, Issue , 1997, Pages 279-284

Macroscopic modelling of silicon carbide sublimation: Toward a microscopic modelling of defect formation

(7) Pons, M a Anikin, M b Dedulle, J M b Madar, R b Chourou, K b Blanquet, E a Bernard, C a

a UNIV GRENOBLE ALPES (France)

b LABORATOIRE DES MATÉRIAUX ET DU GÉNIE PHYSIQUE (France)

Author keywords

Defect formation; Macroscopic modelling; Microscopic modelling; Silicon carbide

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH; HEAT TRANSFER; INDUCTION HEATING; MASS TRANSFER; MATHEMATICAL MODELS; SINGLE CRYSTALS; SUBLIMATION; THERMAL GRADIENTS; THERMODYNAMICS;

MACROSCOPIC MODELS; MICROSCOPIC MODELS;

SILICON CARBIDE;

EID: 0031245657 PISSN: 02578972 EISSN: None Source Type: Journal
DOI: 10.1016/S0257-8972(97)00339-3 Document Type: Article

Times cited : (10)

References (13)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.