Virtual reactor as a new tool for modeling and optimization of SiC bulk crystal growth

Journal of Crystal Growth

Volumn 225, Issue 2-4, 2001, Pages 307-311

  Bogdanov, M V ^a   Galyukov, A O ^a   Karpov, S Yu ^a   Kulik, A V ^a   Kochuguev, S K ^a   Ofengeim, D Kh ^a   Tsiryulnikov, A V ^a   Ramm, M S ^b   Zhmakin, A I ^b   Makarov, Yu N ^c  

^a SOFT IMPACT LTD   (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

^c UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

A1. Computer simulation; A1. Heat transfer; A1. Mass transfer; A2. Growth from vapor; A2. Single crystal growth; B2. Semiconducting silicon compounds

Indexed keywords

COMPUTER SIMULATION; CRYSTAL GROWTH; HEAT TRANSFER; MASS TRANSFER; MATHEMATICAL MODELS; SEMICONDUCTING SILICON COMPOUNDS; SINGLE CRYSTALS; SOFTWARE ENGINEERING;

VIRTUAL REACTOR (VR);

SILICON CARBIDE;

EID: 0035334466     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00879-X     Document Type: Conference Paper

References (14)