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Volumn 202, Issue 1, 1997, Pages 201-220

Simulation of sublimation growth of SiC single crystals

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Indexed keywords


EID: 0031511530     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3951(199707)202:1<201::AID-PSSB201>3.0.CO;2-T     Document Type: Article
Times cited : (50)

References (38)
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    • Pat. USSR N403275, 1970; Pat. G.B. N1458445 (21. 02. 74); Pat. USA N4147575 (03. 04. 79)
    • YU. A. VODAKOV and E. N. MOKHOV, Pat. USSR N403275, 1970; Pat. G.B. N1458445 (21. 02. 74); Pat. USA N4147575 (03. 04. 79).
    • Vodakov, Yu.A.1    Mokhov, E.N.2
  • 13
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    • E. G. IVANOV, YU. M. TAIROV, and V. F. TSVETKOV, Univ. Rep., Non-Organic Mater. 21, 588 (1985) (in Russian). YU. M. TAIROV, Mater. Sci. Engng. B 29, 83 (1995).
    • (1995) Mater. Sci. Engng. B , vol.29 , pp. 83
    • Tairov, Yu.M.1
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    • M. G. SPENCER, private communication (1996).
    • (1996)
    • Spencer, M.G.1
  • 37
    • 85033078892 scopus 로고    scopus 로고
    • private communication
    • D. HOFMANN, private communication (1996).
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    • Hofmann, D.1
  • 38
    • 85033094655 scopus 로고    scopus 로고
    • private communication
    • YU. A. VODAKOV, private communication (1996).
    • (1996)
    • Vodakov, Yu.A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.