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Volumn 9, Issue 3, 2000, Pages 446-451
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Evolution of thermoelastic strain and dislocation density during sublimation growth of silicon carbide
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Author keywords
[No Author keywords available]
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Indexed keywords
ANISOTROPY;
CRYSTAL GROWTH;
CRYSTALLIZATION;
DISLOCATIONS (CRYSTALS);
STRAIN;
SUBLIMATION;
THERMOELASTICITY;
VAPOR DEPOSITION;
PHYSICAL VAPOR DEPOSITION (PVD);
THERMOELASTIC STRAIN;
SILICON CARBIDE;
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EID: 0033737358
PISSN: 09259635
EISSN: None
Source Type: Journal
DOI: 10.1016/S0925-9635(99)00307-6 Document Type: Article |
Times cited : (27)
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References (8)
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