Role of E-E scattering in the enhancement of channel hot carrier degradation of deep-submicron NMOSFETs at high VGS conditions

IEEE Transactions on Device and Materials Reliability

Volumn 1, Issue 2, 2001, Pages 113-119

  Rauch, Stewart E ^a   Rosa, Giuseppe La ^a   Guarin, Fernando J ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 23844536444     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/7298.956705     Document Type: Article

References (27)

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