A New “Shift and Ratio” Method for MOSFET Channel-Length Extraction

IEEE Electron Device Letters

Volumn 13, Issue 5, 1992, Pages 267-269

  Taur, Yuan ^a   Zicherman, D S ^a   Lombardi, D R ^a   Restle, Phillip J ^a   Hsu, C H ^a   Hanafi, Hussein I ^a   Wordeman, Matthew R ^a   Davari, Bijan ^a   Shahidi, Ghavam G ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; INTEGRATED CIRCUITS, CMOS;

CHANNEL MOBILITY; DEEP-SUBMICROMETER CMOS DEVICES; MOSFET CHANNEL LENGTH EXTRACTION; SHIFT-AND-RATIO ALGORITHM; SOURCE-DRAIN RESISTANCE;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0026869985     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.145049     Document Type: Article

References (10)

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