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Volumn , Issue , 1998, Pages 893-896
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Monte Carlo simulation of hot-carrier degradation in scaled MOS transistors for VLSI technology
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Author keywords
[No Author keywords available]
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Indexed keywords
GATES (TRANSISTOR);
HOT CARRIERS;
MONTE CARLO METHODS;
SEMICONDUCTOR DEVICE MODELS;
VLSI CIRCUITS;
FULL BAND MONTE CARLO (FBMC) SIMULATION;
HOT ELECTRON INDUCED DEGRADATION (HEID);
MOSFET DEVICES;
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EID: 0032279148
PISSN: 01631918
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (7)
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References (12)
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