Magnitude of the threshold energy for hot electron damage in metal-oxide-semiconductor field effect transistors by hydrogen desorption

Applied Physics Letters

Volumn 75, Issue 20, 1999, Pages 3147-3149

  Hess, K ^a   Tuttle, B ^a   Register, F ^a   Ferry, D K ^b  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b Arizona State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001504797     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.125259     Document Type: Article

References (12)

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