Spatial retardation of carrier heating in scaled 0.1-μm n-MOSFET's using monte carlo simulations

IEEE Transactions on Electron Devices

Volumn 43, Issue 4, 1996, Pages 661-663

  Hulfachor, R B ^a   Ellis Monaghan, J J ^a   Kim, K W ^a   Littlejohn, M A ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; ELECTRONS; HOT CARRIERS; INTERFACES (MATERIALS); MATHEMATICAL MODELS; MONTE CARLO METHODS; SEMICONDUCTOR DOPING;

CARRIER HEATING; ELECTRON INJECTION;

MOSFET DEVICES;

EID: 0030128772     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.485550     Document Type: Article

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