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Volumn 11, Issue 10, 1990, Pages 472-474

Reconciliation of a Hot-Electron Distribution Function with the Lucky Electron-Exponential Model in Silicon

Author keywords

[No Author keywords available]

Indexed keywords

IONIZATION; SEMICONDUCTOR DEVICES, MOSFET;

EID: 0025505243     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.63000     Document Type: Article
Times cited : (21)

References (12)
  • 1
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    • (1988) Solid-State Electron. , vol.31 , pp. 1089
    • Goldsman, N.1    Frey, J.2
  • 2
    • 0025449439 scopus 로고
    • An analytical model of the energy distribu-tion of hot electrons
    • D. Cassi and B. Ricco, “An analytical model of the energy distribu-tion of hot electrons,” IEEE Trans. Electron Devices, vol. 37, p. 1514, 1990.
    • (1990) IEEE Trans. Electron Devices , vol.37 , pp. 1514
    • Cassi, D.1    Ricco, B.2
  • 3
    • 0002861764 scopus 로고
    • Problems related to p-n junctions in silicon
    • W. Shockley, “Problems related to p-n junctions in silicon,” Solid-State Electron., vol. 2, p. 35, 1961.
    • (1961) Solid-State Electron. , vol.2 , pp. 35
    • Shockley, W.1
  • 4
    • 0020952509 scopus 로고
    • Hot-electron effects in MOSFET’s
    • C. Hu, “Hot-electron effects in MOSFET’s,” in IEDM Tech. Dig., 1983, p. 176.
    • (1983) IEDM Tech. Dig. , pp. 176
    • Hu, C.1
  • 5
    • 84945713471 scopus 로고
    • Hot-electron-induced MOSFET degradation—Model, monitor, and improvement
    • C. Hu et al., “Hot-electron-induced MOSFET degradation—Model, monitor, and improvement,” IEEE Trans. Electron Devices, vol. ED-32, p. 375, 1985.
    • (1985) IEEE Trans. Electron Devices , vol.ED-32 , pp. 375
    • Hu, C.1
  • 6
    • 0042755866 scopus 로고
    • Lucky-drift mechanism for impact ionisation in semiconductors
    • B. K. Ridley, “Lucky-drift mechanism for impact ionisation in semiconductors,” J. Phys. C, vol. 16, p. 3373, 1983.
    • (1983) J. Phys. C , vol.16 , pp. 3373
    • Ridley, B.K.1
  • 7
    • 0023250311 scopus 로고
    • A lucky drift model, including a soft threshold energy, fitted to experimental measurements of ionization coefficients
    • J. S. Marsland, “A lucky drift model, including a soft threshold energy, fitted to experimental measurements of ionization coefficients,” Solid-State Electron., vol. 30, p. 125, 1987.
    • (1987) Solid-State Electron. , vol.30 , pp. 125
    • Marsland, J.S.1
  • 8
    • 35949025517 scopus 로고
    • Monte-Carlo method for the solution of charge transport in semiconductors with applications to covalent materials
    • C. Jacoboni and L. Reggiani, “Monte-Carlo method for the solution of charge transport in semiconductors with applications to covalent materials,” Rev. Modern Phys., vol. 55, pp. 645, 1983.
    • (1983) Rev. Modern Phys. , vol.55 , pp. 645
    • Jacoboni, C.1    Reggiani, L.2
  • 9
    • 0023033540 scopus 로고
    • Monte Carlo modeling of hot electron gate current in MOSFETs
    • B. Ricco, E. Sangiori, F. Venturi, and P. Lugli, “Monte Carlo modeling of hot electron gate current in MOSFETs,” in IEDM Tech. Dig., 1986, p. 559.
    • (1986) IEDM Tech. Dig. , pp. 559
    • Ricco, B.1    Sangiori, E.2    Venturi, F.3    Lugli, P.4
  • 10
    • 84941537835 scopus 로고
    • Modeling electron transport and degradation mechanisms in semiconductor submicron devices
    • Ph.D. dissertation, Cornell Univ., Ithaca, NY
    • N. Goldsman, “Modeling electron transport and degradation mechanisms in semiconductor submicron devices,” Ph.D. dissertation, Cornell Univ., Ithaca, NY, p. 160, 1989.
    • (1989) , pp. 160
    • Goldsman, N.1
  • 11
    • 35949009958 scopus 로고
    • Monte Carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects
    • M. V. Fischetti and S. E. Laux, “Monte Carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects,” Phys. Rev. B, vol. 38, p. 9721, 1988.
    • (1988) Phys. Rev. B , vol.38 , pp. 9721
    • Fischetti, M.V.1    Laux, S.E.2
  • 12
    • 84941537836 scopus 로고
    • Theoretical studies of high field, high energy transport in gallium arsenide, silicon and heterostructures
    • Ph.D. dissertation, Univ. of Illinois, Urbana
    • J. Y. F. Tang, “Theoretical studies of high field, high energy transport in gallium arsenide, silicon and heterostructures,” Ph.D. dissertation, Univ. of Illinois, Urbana, 1983.
    • (1983)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.