Universal description of hot-carrier-induced interface states in NMOSFETs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 1992-December, Issue , 1992, Pages 535-538

  Woltjer, R ^a   Paulzen, G ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; HOT CARRIERS; MOSFET DEVICES;

CARRIER INDUCED; CHARGE PUMPING; GATE VOLTAGES; OXIDE FIELD DEPENDENCE; OXIDE THICKNESS; STRESS VOLTAGES; TRANSISTOR PARAMETERS; UNIVERSAL DESCRIPTION;

INTERFACE STATES;

EID: 85025604971     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1992.307418     Document Type: Conference Paper

References (8)

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