New mechanism of hot carrier generation in very short channel MOSFETs

Electronics Letters

Volumn 31, Issue 2, 1995, Pages 139-141

  Childs, P A ^a   Leung, C C C ^a  

^a UNIVERSITY OF BIRMINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC NETWORK ANALYSIS; ELECTRON ENERGY LEVELS; ELECTRON SCATTERING; ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; HOT CARRIERS; SEMICONDUCTOR DEVICE STRUCTURES;

BOLTZMANN TRANSPORT EQUATIONS; ELECTRON-ELECTRON INTERACTIONS; HOT CARRIER GENERATION;

MOSFET DEVICES;

EID: 0029196785     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19950091     Document Type: Article

References (5)

1. CHEUNG, J.E., JENG, M.-C., MOON, J.E., KO, P.-K., and HU, C.: ‘Low-voltage hot-electron currents and degradation in deep-submicrometer MOSFETs’, IEEE Trans., 1990, ED-37, (7), pp. 1651-1657
2. MANCHANDA, L., STORZ, R.H., YAN, R.H., LEE, K.F., and WESTERWICK, E.H.: ‘Clear observation of sub-band gap impact ionisation at room temperature and below in 0.1μm Si MOSFETs’. IEDM Tech. Dig., 1992, pp. 994-996
3. LEUNG, C.C.C., and CHILDS, P.A.: ‘Spatially transient hot electron distributions in silicon determined from the Chambers path integral solution of the Boltzmann transport equation’, Solid-State Electron., 1993, 36, (7), pp. 1001-1005
4. LEUNG, C.C.C., and CHILDS, P.A.: ‘On the above supply voltage hot carrier distribution in semiconductor devices’, to be published in Appl. Phys. Lett.
5. SANO, N., and YOSHII, A.: ‘Impact-ionisation theory with a realistic band structure of silicon’, Phys. Rev. B, 1992, 45, (8), pp. 4171— 4180