New understanding of LDD CMOS hot-carrier degradation and device lifetime at cryogenic temperatures

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 1997, Pages 312-319

  Wang Ratkovic, Janet ^a   Lacoe, Ronald C ^a   MacWilliams, Kenneth P ^a   Song, Miryeong ^a   Brown, Stephanie ^a   Yabiku, Garenn ^a  

^a AEROSPACE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; CRYOGENICS; GATES (TRANSISTOR); HOT CARRIERS; LOW TEMPERATURE OPERATIONS; SEMICONDUCTOR DOPING; TRANSCONDUCTANCE;

GATE VOLTAGE STRESS; LIGHTLY DOPED DRAIN (LDD) MOSFET DEVICES;

MOSFET DEVICES;

EID: 0030704122     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)