Temperature dependence of substrate current and hot carrier-induced degradation at low drain bias

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1998, Pages 178-179

  Aminzadeh, Payman ^a   Alavi, Mohsen ^a   Scharfetter, Don ^a  

^a INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ELECTRIC CURRENTS; ELECTRONS; HIGH TEMPERATURE EFFECTS; HOT CARRIERS; MOS DEVICES; SUBSTRATES;

HOT CARRIER LIFETIME;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0031639820     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)