Mechanisms of p-GaAs(100) surface by atomic force microscope nano-oxidation

Journal of Physics D: Applied Physics

Volumn 38, Issue 14, 2005, Pages 2424-2432

  Jian, Sheng Rui ^a   Fang, Te Hua ^b   Chuu, Der San ^c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC OXIDATION; ATMOSPHERIC HUMIDITY; ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; ELECTRIC FIELDS; ELECTROCHEMISTRY; GROWTH (MATERIALS); INDENTATION; LITHOGRAPHY; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY;

ANODIZATION VOLTAGES; CANTILEVERS; LOCAL OXIDATION LITHOGRAPHY; NANO-OXIDATION; NANOINDENTATION TECHNIQUES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 22144452924     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/38/14/019     Document Type: Article

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