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Volumn 66, Issue SUPPL. 1, 1998, Pages
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An AFM-based surface oxidation process for heavily carbon-doped p-type GaAs with a hole concentration of 1:5×1021 cm-3
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Author keywords
[No Author keywords available]
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Indexed keywords
AFM;
AMBIENT HUMIDITY;
APPLIED BIAS VOLTAGE;
BIAS CONDITIONS;
ELECTRONIC MATERIALS;
FEATURE SIZES;
GAAS;
JUNCTION STRUCTURE;
NORMAL METALS;
NOVEL DEVICES;
P-TYPE GAAS;
SCANNING SPEED;
SELECTIVE SURFACE;
SIS JUNCTIONS;
SURFACE MODIFICATION TECHNIQUES;
SURFACE OXIDATIONS;
ULTRA-SMALL;
ATOMIC FORCE MICROSCOPY;
GALLIUM ALLOYS;
GALLIUM ARSENIDE;
HOLE CONCENTRATION;
MOISTURE;
OXIDATION;
OXIDATION RESISTANCE;
PHOTORESISTS;
SEMICONDUCTING GALLIUM;
SURFACES;
SWITCHING CIRCUITS;
SEMICONDUCTOR JUNCTIONS;
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EID: 0001406117
PISSN: 09478396
EISSN: 14320630
Source Type: Journal
DOI: 10.1007/s003390051302 Document Type: Article |
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Times cited : (16)
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References (13)
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