Room temperature operation of a single electron transistor made by the scanning tunneling microscope nanooxidation process for the TiOx/Ti system

Applied Physics Letters

Volumn 68, Issue 1, 1996, Pages 34-36

  Matsumoto, K ^a   Ishii, M ^a   Segawa, K ^a   Oka, Y ^a   Vartanian, B J ^b   Harris, J S ^b  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b Stanford University ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0002412473     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116747     Document Type: Article

References (4)

1. K. Yano, T. Ishii, T. Hashimoto, T. Kobayashi, F. Murai, and K. Seki, Technical Digest of 1993 International Electron Device Meeting, 541 (1993).
2. K. Matsumoto, S. Takahashi, M. Ishii, M. Hoshi, A. Kurokawa, S. Ichimura, and A. Ando, Extended Abstracts of 1994 International Conference of Solid State Device and Materials, Yokohama, Japan, 46 (1994).
3. K. Matsumoto, S. Takahashi, M. Ishii, M. Hoshi, A. Kurokawa, S. Ichimura, and A. Ando, Jpn. J. Appl. Phys. 34, 2B, 1387 (1995).
4. K. Matsumoto, M. Ishii, J. Shirakashi, Y. Oka, A. Kurokawa, and S. Ichimura (unpublished).