Decrease in Al acceptor density in Al-doped 4H-SiC by irradiation with 4.6 MeV electrons

Applied Physics Letters

Volumn 83, Issue 24, 2003, Pages 4981-4983

  Matsuura, Hideharu ^a   Aso, Koichi ^a   Kagamihara, Sou ^a   Iwata, Hirofumi ^a   Ishida, Takuya ^a   Nishikawa, Kazuhiro ^b  

^a OSAKA ELECTRO COMMUNICATION UNIVERSITY   (Japan)

^b Sansha Electric Manufacturing Co Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CHEMICAL BONDS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON IRRADIATION; ELECTRON MOBILITY; HALL EFFECT; MAGNETIC VARIABLES MEASUREMENT; OPTICAL VARIABLES MEASUREMENT; PARAMAGNETIC RESONANCE; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; SILICON CARBIDE;

ACCEPTOR DENSITY; FREE CARRIER CONCENTRATION SPECTROSCOPY; HOLE CONCENTRATION; TEMPERATURE DEPENDENCE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0346669750     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1634381     Document Type: Article

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