Schottky barrier modification and electrical characterization of low energy He-ion bombardment induced defects in n- and p-type GaAs

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 148, Issue 1-4, 1999, Pages 441-445

  Legodi, M J ^a   Auret, F D ^a   Goodman, S A ^a   Malherbe, J B ^a  

^a UNIVERSITY OF PRETORIA   (South Africa)

Author keywords

Barrier height; DLTS; GaAs; He ion

Indexed keywords

ANNEALING; CAPACITANCE MEASUREMENT; CRYSTAL DEFECTS; CURRENT VOLTAGE CHARACTERISTICS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC CURRENT MEASUREMENT; ELECTRONIC PROPERTIES; HELIUM; ION BOMBARDMENT; SEMICONDUCTOR DOPING; VOLTAGE MEASUREMENT;

SCHOTTKY BARRIER HEIGHT MODIFICATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033513767     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00859-3     Document Type: Article

References (11)

1. P. Bhattacharya, in: Semiconductor Optoelectronic Devices, Prentice-Hall of India, New Delhi, 1995.
2. E.H. Rhoderick , R. H. Williams, in: Metal-Semiconductor Contacts, Clarendon Press, Oxford, 1988.
3. M.S. Tyagi, in: B. L. Sharma (Ed.), Metal-Semiconductor Schottky Barrier Junctions and their Applications, Plenum Press, New York, 1984.
4. S.M. Sze, in: Physics of Semiconductor Devices, Wiley, New York, 1981.
5. S.J. Pearton, C.R. Abernathy, F. Ren, in: Topics in growth and device processing of III-V semiconductors, World Scientific, Singapore, 1996.
6. D.C. Sawko, J. Bartko, IEEE Trans. Nucl. Sci. 30 (1983) 1756.
7. D.V. Lang, J. Appl. Phys. 45 (1974) 3014.
8. S.A. Goodman, F.D. Auret, M. Hayes, G. Myburg, W.E. Meyer, Phys. Stat. Sol (a) 140 (1993) 381.
9. F.D. Auret, R.M. Erasmus, S.A. Goodman, W.E. Meyer, Phys. Rev. B 51 (1995) 17521.
10. L. Lindhard, M. Scharff, H.E. Schiott, Kgl. Dan. Vol. Selsk. Mat. Fys. Medd. 33 (1963) 14.
11. A. Cola, M.G. Lupo, L. Vasanelli, A. Valentini, S.S. Electr. 36 (1993) 785.